ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1920A05 5 watts, 26 volts, class a personal 1930 - 1990 mhz general description the 1920A05 is a common emitter transistor capable of providing 5 watts of class a, rf output power over the band 1930-1990 mhz. this transistor is specifically designed for personal communications base station linear amplifier applications. it includes input prematching and utilizes gold metalization and high value emitter ballasting to provide high reliability and supreme ruggedness. case outline 55ct, style 2 common emitter absolute maximum ratings maximum power dissipation @ 25 c 35 watts o maximum voltage and current bvces collector to emitter voltage 55 volts lvceo collector to emitter voltage 27 volts bvebo emitter to base voltage 3.5 volts ic collector current 3.5 amps maximum temperatures storage temperature - 65 to + 150 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg imd 3 h c vswr 1 power out power input power gain intermodulation distortion collector efficiency load mismatch tolerance f =1930 - 1990 mhz vce = 26 volts icq = 600 mamps as above at p1db 5 11 12 30 .4 3:1 watt watt db db % bvces lvceo bvebo ices h fe cob q jc collector to emitter breakdown collector to emitter breakdown emitter to base breakdown collector leakage current dc - current gain output capacitance thermal resistance ic = 50 ma ic = 50 ma ie = 10 ma vce = 27 volts vce = 5 v, ic = 0.5 a f =1 mhz, vcb = 28 v tc = 25 c o 55 27 3.5 20 10 100 5.0 volts volts volts ma pf c/w o issue february 1996
1920A05 august 1996
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